SI7703EDN-T1-E3
P-CHANNEL 20V 4.3A (TA) 1.3W (TA) SURFACE MOUNT POWERPAK® 1212-8Call for availability
Manufactured by:
Mfr Part#: SI7703EDN-T1-E3
PACKAGE / CASE: POWERPAK® 1212-8
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 1212-8
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.3A (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
EXPANDED DESCRIPTION: P-CHANNEL 20V 4.3A (TA) 1.3W (TA) SURFACE MOUNT POWERPAK® 1212-8
FET FEATURE: SCHOTTKY DIODE (ISOLATED)
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 18NC @ 4.5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI7703EDN-T1-E3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® 1212-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.3W (TA)
RDS ON (MAX) @ ID, VGS: 48 MOHM @ 6.3A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 1212-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 1V @ 800ΜA
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