SI7726DN-T1-GE3
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Mfr Part#: SI7726DN-T1-GE3
PACKAGE / CASE: POWERPAK® 1212-8
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 1212-8
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 35A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 43NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1765PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI7726DN-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -50°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® 1212-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 3.8W (TA), 52W (TC)
RDS ON (MAX) @ ID, VGS: 9.5 MOHM @ 10A, 10V
SERIES: SKYFET®, TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 1212-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 2.6V @ 250ΜA
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