CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  6.2A (TA)

DETAILED DESCRIPTION:  N-CHANNEL 60V 6.2A (TA) 1.8W (TA) SURFACE MOUNT POWERPAK® SO-8

DRAIN TO SOURCE VOLTAGE (VDSS):  60V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  27NC @ 10V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SI7850DP-T1-E3

MANUFACTURER STANDARD LEAD TIME:  33 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® SO-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  1.8W (TA)

RDS ON (MAX) @ ID, VGS:  22 MOHM @ 10.3A, 10V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  POWERPAK® SO-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA