SI8425DB-T1-E1
P-CHANNEL 20V 1.1W (TA), 2.7W (TC) SURFACE MOUNT 4-WLCSP (1.6X1.6)Call for availability
Manufactured by:
Mfr Part#: SI8425DB-T1-E1
PACKAGE / CASE: 4-UFBGA, WLCSP
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 4-WLCSP (1.6X1.6)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DETAILED DESCRIPTION: P-CHANNEL 20V 1.1W (TA), 2.7W (TC) SURFACE MOUNT 4-WLCSP (1.6X1.6)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.8V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 110NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 2800PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI8425DB-T1-E1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 4-UFBGA, WLCSP
PACKAGING: REEL
POWER DISSIPATION (MAX): 1.1W (TA), 2.7W (TC)
RDS ON (MAX) @ ID, VGS: 23 MOHM @ 2A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 4-WLCSP (1.6X1.6)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±10V
VGS(TH) (MAX) @ ID: 900MV @ 250ΜA
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