CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DETAILED DESCRIPTION: P-CHANNEL 8V 500MW (TA) SURFACE MOUNT 4-MICROFOOT
DRAIN TO SOURCE VOLTAGE (VDSS): 8V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.2V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 10NC @ 4.5V
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI8805EDB-T2-E1
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 4-XFBGA
PACKAGING: REEL
POWER DISSIPATION (MAX): 500MW (TA)
RDS ON (MAX) @ ID, VGS: 68 MOHM @ 1.5A, 4.5V
SERIES: TRENCHFET®
SUPPLIER DEVICE PACKAGE: 4-MICROFOOT
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±5V
VGS(TH) (MAX) @ ID: 700MV @ 250ΜA
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