SI8812DB-T2-E1
N-CHANNEL 20V 500MW (TA) SURFACE MOUNT 4-MICROFOOTCall for availability
Manufactured by:
Mfr Part#: SI8812DB-T2-E1
PACKAGE / CASE: 4-UFBGA
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 4-MICROFOOT
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DETAILED DESCRIPTION: N-CHANNEL 20V 500MW (TA) SURFACE MOUNT 4-MICROFOOT
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.2V, 4.5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 17NC @ 8V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI8812DB-T2-E1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 4-UFBGA
PACKAGING: REEL
POWER DISSIPATION (MAX): 500MW (TA)
RDS ON (MAX) @ ID, VGS: 59 MOHM @ 1A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 4-MICROFOOT
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±5V
VGS(TH) (MAX) @ ID: 1V @ 250ΜA
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