Availability
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CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DETAILED DESCRIPTION: P-CHANNEL 30V 500MW (TA) SURFACE MOUNT 4-MICROFOOT
DRAIN TO SOURCE VOLTAGE (VDSS): 30V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 17NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 440PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI8821EDB-T2-E1
MANUFACTURER STANDARD LEAD TIME: 46 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 4-XFBGA, CSPBGA
PACKAGING: REEL
POWER DISSIPATION (MAX): 500MW (TA)
RDS ON (MAX) @ ID, VGS: 135 MOHM @ 1A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: 4-MICROFOOT
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.3V @ 250ΜA
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