CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 4.7A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 22NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 600PF @ 30V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI9407BDY-T1-E3
MANUFACTURER STANDARD LEAD TIME: 15 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-SOIC (0.154", 3.90MM WIDTH)
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.4W (TA), 5W (TC)
RDS ON (MAX) @ ID, VGS: 120 MOHM @ 3.2A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 2,500
SUPPLIER DEVICE PACKAGE: 8-SO
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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