Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CONFIGURATION: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 20 V
DRAIN CURRENT-MAX (ID): 3 A
DRAIN-SOURCE ON RESISTANCE-MAX: 250 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JESD-30 CODE: R-PDSO-G8
JESD-609 CODE: E0
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SI9942DY-T1
MOISTURE SENSITIVITY LEVEL: 1
NUMBER OF ELEMENTS: 2
NUMBER OF TERMINALS: 8
OPERATING MODE: ENHANCEMENT MODE
OPERATING TEMPERATURE-MAX: 150 °C
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, R-PDSO-G8
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
PBFREE CODE: NO
PEAK REFLOW TEMPERATURE (CEL): 240
POLARITY/CHANNEL TYPE: N-CHANNEL AND P-CHANNEL
POWER DISSIPATION AMBIENT-MAX: 2 W
QUALIFICATION STATUS: NOT QUALIFIED
SURFACE MOUNT: YES
TERMINAL FINISH: TIN LEAD
TERMINAL FORM: GULL WING
TERMINAL POSITION: DUAL
TIME@PEAK REFLOW TEMPERATURE-MAX (S): 30
TRANSISTOR ELEMENT MATERIAL: SILICON
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