SIB452DK-T1-GE3
N-CHANNEL 190V 1.5A (TC) 2.4W (TA), 13W (TC) SURFACE MOUNT POWERPAK® SC-75-6L SINGLECall for availability
Manufactured by:
Mfr Part#: SIB452DK-T1-GE3
PACKAGE / CASE: POWERPAK® SC-75-6L
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SC-75-6L SINGLE
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.5A (TC)
DETAILED DESCRIPTION: N-CHANNEL 190V 1.5A (TC) 2.4W (TA), 13W (TC) SURFACE MOUNT POWERPAK® SC-75-6L SINGLE
DRAIN TO SOURCE VOLTAGE (VDSS): 190V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.8V, 4.5V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 6.5NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 135PF @ 50V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIB452DK-T1-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® SC-75-6L
PACKAGING: REEL
POWER DISSIPATION (MAX): 2.4W (TA), 13W (TC)
RDS ON (MAX) @ ID, VGS: 2.4 OHM @ 500MA, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SC-75-6L SINGLE
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±16V
VGS(TH) (MAX) @ ID: 1.5V @ 250ΜA
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