Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CASE CONNECTION: DRAIN
CONFIGURATION: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS BREAKDOWN VOLTAGE-MIN: 30 V
DRAIN CURRENT-MAX (ABS) (ID): 7.4 A
DRAIN CURRENT-MAX (ID): 7.4 A
DRAIN-SOURCE ON RESISTANCE-MAX: 19 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JESD-30 CODE: R-XDSO-F6
JESD-609 CODE: E3
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIF912EDZ-T1-GE3
MOISTURE SENSITIVITY LEVEL: 1
NUMBER OF ELEMENTS: 2
NUMBER OF TERMINALS: 6
OPERATING MODE: ENHANCEMENT MODE
OPERATING TEMPERATURE-MAX: 150 °C
PACKAGE BODY MATERIAL: UNSPECIFIED
PACKAGE DESCRIPTION: SMALL OUTLINE, R-XDSO-F6
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
PBFREE CODE: YES
PEAK REFLOW TEMPERATURE (CEL): 260
PIN COUNT: 6
POLARITY/CHANNEL TYPE: N-CHANNEL
POWER DISSIPATION-MAX (ABS): 3.5 W
PULSED DRAIN CURRENT-MAX (IDM): 80 A
QUALIFICATION STATUS: NOT QUALIFIED
SUBCATEGORY: FET GENERAL PURPOSE POWER
SURFACE MOUNT: YES
TERMINAL FINISH: MATTE TIN
TERMINAL FORM: FLAT
TERMINAL POSITION: DUAL
TIME@PEAK REFLOW TEMPERATURE-MAX (S): 40
TRANSISTOR APPLICATION: SWITCHING
TRANSISTOR ELEMENT MATERIAL: SILICON
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