SIHB33N60E-GE3
N-CHANNEL 600V 33A (TC) 278W (TC) SURFACE MOUNT D2PAKCall for availability
Manufactured by:
Mfr Part#: SIHB33N60E-GE3
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: BULK PACK
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: D2PAK
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 33A (TC)
DETAILED DESCRIPTION: N-CHANNEL 600V 33A (TC) 278W (TC) SURFACE MOUNT D2PAK
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 150NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 3508PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIHB33N60E-GE3
MANUFACTURER STANDARD LEAD TIME: 21 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: BULK PACK
POWER DISSIPATION (MAX): 278W (TC)
RDS ON (MAX) @ ID, VGS: 99 MOHM @ 16.5A, 10V
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: D2PAK
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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