SIHF12N60E-E3
N-CHANNEL 600V 12A (TC) 33W (TC) THROUGH HOLE TO-220 FULL PACKCall for availability
Manufactured by:
Mfr Part#: SIHF12N60E-E3
PACKAGE / CASE: TO-220-3 FULL PACK
PACKAGING: BULK PACK
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220 FULL PACK
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 12A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
EXPANDED DESCRIPTION: N-CHANNEL 600V 12A (TC) 33W (TC) THROUGH HOLE TO-220 FULL PACK
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 58NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 937PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIHF12N60E-E3
MANUFACTURER STANDARD LEAD TIME: 19 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3 FULL PACK
PACKAGING: BULK PACK
POWER DISSIPATION (MAX): 33W (TC)
RDS ON (MAX) @ ID, VGS: 380 MOHM @ 6A, 10V
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220 FULL PACK
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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