Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
ADDITIONAL FEATURE: AVALANCHE RATED
AVALANCHE ENERGY RATING (EAS): 230 MJ
CASE CONNECTION: DRAIN
CONFIGURATION: SINGLE WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 100 V
DRAIN CURRENT-MAX (ABS) (ID): 28 A
DRAIN CURRENT-MAX (ID): 28 A
DRAIN-SOURCE ON RESISTANCE-MAX: 77 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 CODE: TO-263AB
JESD-30 CODE: R-PSSO-G2
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIHF540STRL-GE3
NUMBER OF ELEMENTS: 1
NUMBER OF TERMINALS: 2
OPERATING MODE: ENHANCEMENT MODE
OPERATING TEMPERATURE-MAX: 175 °C
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, R-PSSO-G2
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
PART PACKAGE CODE: D2PAK
PBFREE CODE: YES
PEAK REFLOW TEMPERATURE (CEL): 260
PIN COUNT: 4
POLARITY/CHANNEL TYPE: N-CHANNEL
POWER DISSIPATION-MAX (ABS): 150 W
PULSED DRAIN CURRENT-MAX (IDM): 110 A
QUALIFICATION STATUS: NOT QUALIFIED
SUBCATEGORY: FET GENERAL PURPOSE POWER
SURFACE MOUNT: YES
TERMINAL FINISH: NOT SPECIFIED
TERMINAL FORM: GULL WING
TERMINAL POSITION: SINGLE
TIME@PEAK REFLOW TEMPERATURE-MAX (S): 40
TRANSISTOR APPLICATION: SWITCHING
TRANSISTOR ELEMENT MATERIAL: SILICON
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