CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 47A (TC)
DETAILED DESCRIPTION: N-CHANNEL 600V 47A (TC) 357W (TC) THROUGH HOLE TO-247AC
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 220NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 9620PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIHG47N60E-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-247-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 357W (TC)
RDS ON (MAX) @ ID, VGS: 64 MOHM @ 24A, 10V
STANDARD PACKAGE: 500
SUPPLIER DEVICE PACKAGE: TO-247AC
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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