CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 16A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 82NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 1416PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIHH14N60E-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 19 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
POWER - MAX: 147W
RDS ON (MAX) @ ID, VGS: 255 MOHM @ 7A, 10V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 8 X 8
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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