SIHH21N60E-T1-GE3
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Mfr Part#: SIHH21N60E-T1-GE3
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 8 X 8
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 20A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 600V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 83NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 2015PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIHH21N60E-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 19 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERTDFN
PACKAGING: REEL
POWER - MAX: 104W
RDS ON (MAX) @ ID, VGS: 176 MOHM @ 11A, 10V
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 8 X 8
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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