SIHP12N65E-GE3
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Manufactured by:
Mfr Part#: SIHP12N65E-GE3
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220AB
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 12A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 650V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 70NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 1224PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIHP12N65E-GE3
MANUFACTURER STANDARD LEAD TIME: 19 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER - MAX: 156W
RDS ON (MAX) @ ID, VGS: 380 MOHM @ 6A, 10V
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220AB
VGS(TH) (MAX) @ ID: 4V @ 250ΜA
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