CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 25A (TC)
DETAILED DESCRIPTION: N-CHANNEL 400V 25A (TC) 278W (TC) THROUGH HOLE TO-220AB
DRAIN TO SOURCE VOLTAGE (VDSS): 400V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 88NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 1707PF @ 100V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIHP25N40D-GE3
MANUFACTURER STANDARD LEAD TIME: 14 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-220-3
PACKAGING: TUBE
POWER DISSIPATION (MAX): 278W (TC)
RDS ON (MAX) @ ID, VGS: 170 MOHM @ 13A, 10V
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: TO-220AB
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±30V
VGS(TH) (MAX) @ ID: 5V @ 250ΜA
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