CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  60A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 40V 60A (TC) 6.25W (TA), 104W (TC) SURFACE MOUNT POWERPAK® SO-8

DRAIN TO SOURCE VOLTAGE (VDSS):  40V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  155NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  5660PF @ 20V

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIR470DP-T1-GE3

MANUFACTURER STANDARD LEAD TIME:  27 WEEKS

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® SO-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  6.25W (TA), 104W (TC)

RDS ON (MAX) @ ID, VGS:  2.3 MOHM @ 20A, 10V

SERIES:  TRENCHFET®

SUPPLIER DEVICE PACKAGE:  POWERPAK® SO-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  2.5V @ 250ΜA