SIR662DP-T1-GE3
N-CHANNEL 60V 60A (TC) 6.25W (TA), 104W (TC) SURFACE MOUNT POWERPAK® SO-8Call for availability
Manufactured by:
Mfr Part#: SIR662DP-T1-GE3
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 60A (TC)
DETAILED DESCRIPTION: N-CHANNEL 60V 60A (TC) 6.25W (TA), 104W (TC) SURFACE MOUNT POWERPAK® SO-8
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 96NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 4365PF @ 30V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIR662DP-T1-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 6.25W (TA), 104W (TC)
RDS ON (MAX) @ ID, VGS: 2.7 MOHM @ 20A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.5V @ 250ΜA
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