SIR800DP-T1-GE3
N-CHANNEL 20V 50A (TC) 5.2W (TA), 69W (TC) SURFACE MOUNT POWERPAK® SO-8Call for availability
Manufactured by:
Mfr Part#: SIR800DP-T1-GE3
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 50A (TC)
DETAILED DESCRIPTION: N-CHANNEL 20V 50A (TC) 5.2W (TA), 69W (TC) SURFACE MOUNT POWERPAK® SO-8
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 2.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 133NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 5125PF @ 10V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SIR800DP-T1-GE3
MANUFACTURER STANDARD LEAD TIME: 15 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: POWERPAK® SO-8
PACKAGING: REEL
POWER DISSIPATION (MAX): 5.2W (TA), 69W (TC)
RDS ON (MAX) @ ID, VGS: 2.3 MOHM @ 15A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® SO-8
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±12V
VGS(TH) (MAX) @ ID: 1.5V @ 250ΜA
Related Products
MFR. Name: Vishay
MFR. Name: Vishay
MFR. Name: Microsemi
MFR. Name: Vishay
MFR. Name: Central Semiconductor Corp
MFR. Name: Infineon Technologies
Please complete form below with your request and a sales representative will contact you shortly. If you have a BOM that needs quoted, please email it to sales@southelectronics.com, or call (334) 458-0070 to speak to a representative .