SIS407DN-T1-GE3

SIS407DN-T1-GE3

P-CHANNEL 20V 25A (TC) 3.6W (TA), 33W (TC) SURFACE MOUNT POWERPAK® 1212-8

Call for availability

Manufactured by:

VISHAY

Mfr Part#:  SIS407DN-T1-GE3

PACKAGE / CASE:  POWERPAK® 1212-8

PACKAGING:  REEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  25A (TC)

DETAILED DESCRIPTION:  P-CHANNEL 20V 25A (TC) 3.6W (TA), 33W (TC) SURFACE MOUNT POWERPAK® 1212-8

DRAIN TO SOURCE VOLTAGE (VDSS):  20V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  1.8V, 4.5V

FET TYPE:  P-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  93.8NC @ 8V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  2760PF @ 10V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SIS407DN-T1-GE3

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

OPERATING TEMPERATURE:  -55°C ~ 150°C (TJ)

PACKAGE / CASE:  POWERPAK® 1212-8

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.6W (TA), 33W (TC)

RDS ON (MAX) @ ID, VGS:  9.5 MOHM @ 15.3A, 4.5V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  POWERPAK® 1212-8

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±8V

VGS(TH) (MAX) @ ID:  1V @ 250ΜA

Related Products

Please complete form below with your request and a sales representative will contact you shortly. If you have a BOM that needs quoted, please email it to sales@southelectronics.com, or call (334) 458-0070 to speak to a representative .

* Denotes required field
Mfg Part Number * Manufacturer Quantity* Target Price (ea) USD Need Parts By

Contact Information:Comments:
Company Name:*
Company Type:
Contact Name:*
Phone:
Email:*