SISS23DN-T1-GE3
P-CHANNEL 20V 50A (TC) 4.8W (TA), 57W (TC) SURFACE MOUNT POWERPAK® 1212-8S (3.3X3.3)Call for availability
Manufactured by:
Mfr Part#: SISS23DN-T1-GE3
PACKAGE / CASE: 8-POWERVDFN
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 1212-8S (3.3X3.3)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 50A (TC)
DETAILED DESCRIPTION: P-CHANNEL 20V 50A (TC) 4.8W (TA), 57W (TC) SURFACE MOUNT POWERPAK® 1212-8S (3.3X3.3)
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 1.8V, 4.5V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 300NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 8840PF @ 15V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SISS23DN-T1-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -50°C ~ 150°C (TJ)
PACKAGE / CASE: 8-POWERVDFN
PACKAGING: REEL
POWER DISSIPATION (MAX): 4.8W (TA), 57W (TC)
RDS ON (MAX) @ ID, VGS: 4.5 MOHM @ 20A, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: POWERPAK® 1212-8S (3.3X3.3)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±8V
VGS(TH) (MAX) @ ID: 900MV @ 250ΜA
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