Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 1.7A (TC)
DETAILED DESCRIPTION: P-CHANNEL 60V 1.7A (TC) 2W (TC) SURFACE MOUNT TO-236 (SOT-23)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 8.5NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 265PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SQ2309ES-T1_GE3
MANUFACTURER STANDARD LEAD TIME: 31 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 2W (TC)
RDS ON (MAX) @ ID, VGS: 336 MOHM @ 3.8A, 10V
SERIES: AUTOMOTIVE, AEC-Q101, TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TO-236 (SOT-23)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 2.5V @ 250ΜA
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