SQ3985EV-T1_GE3
SMALL OUTLINE, R-PDSO-G6Call for availability
Manufactured by:
Mfr Part#: SQ3985EV-T1_GE3
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, R-PDSO-G6
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CONFIGURATION: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 20 V
DRAIN CURRENT-MAX (ID): 3.9 A
DRAIN-SOURCE ON RESISTANCE-MAX: 145 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
FEEDBACK CAP-MAX (CRSS): 57 PF
JEDEC-95 CODE: MO-193AA
JESD-30 CODE: R-PDSO-G6
MANUFACTURER: VISHAY INTERTECHNOLOGIES
MANUFACTURER PART NUMBER: SQ3985EV-T1_GE3
NUMBER OF ELEMENTS: 2
NUMBER OF TERMINALS: 6
OPERATING MODE: ENHANCEMENT MODE
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, R-PDSO-G6
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
POLARITY/CHANNEL TYPE: P-CHANNEL
REFERENCE STANDARD: AEC-Q101
SURFACE MOUNT: YES
TERMINAL FORM: GULL WING
TERMINAL POSITION: DUAL
TRANSISTOR ELEMENT MATERIAL: SILICON
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