CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 120A (TC)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
FET FEATURE: STANDARD
FET TYPE: MOSFET N-CHANNEL, METAL OXIDE
FAMILY: TRANSISTORS - FETS, MOSFETS - SINGLE
GATE CHARGE (QG) @ VGS: 330NC @ 10V
INPUT CAPACITANCE (CISS) @ VDS: 14700PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SQM120N06-3M5L_GE3
MANUFACTURER STANDARD LEAD TIME: 13 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 175°C (TJ)
PACKAGE / CASE: TO-263-3, D²PAK (2 LEADS + TAB), TO-263AB
PACKAGING: REEL
POWER - MAX: 375W
RDS ON (MAX) @ ID, VGS: 3.5 MOHM @ 30A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 800
SUPPLIER DEVICE PACKAGE: TO-263
VGS(TH) (MAX) @ ID: 2.5V @ 250ΜA
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