Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
AVALANCHE ENERGY RATING (EAS): 125 MJ
CASE CONNECTION: DRAIN
CONFIGURATION: SINGLE WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 60 V
DRAIN CURRENT-MAX (ABS) (ID): 50 A
DRAIN CURRENT-MAX (ID): 50 A
DRAIN-SOURCE ON RESISTANCE-MAX: 9 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JESD-30 CODE: R-PSSO-G3
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SQR50N06-07L-GE3
NUMBER OF ELEMENTS: 1
NUMBER OF TERMINALS: 3
OPERATING MODE: ENHANCEMENT MODE
OPERATING TEMPERATURE-MAX: 175 °C
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, R-PSSO-G3
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
PART PACKAGE CODE: TO-252
PBFREE CODE: YES
PEAK REFLOW TEMPERATURE (CEL): 260
PIN COUNT: 3
POLARITY/CHANNEL TYPE: N-CHANNEL
POWER DISSIPATION-MAX (ABS): 136 W
PULSED DRAIN CURRENT-MAX (IDM): 100 A
QUALIFICATION STATUS: NOT QUALIFIED
SUBCATEGORY: FET GENERAL PURPOSE POWER
SURFACE MOUNT: YES
TERMINAL FINISH: NOT SPECIFIED
TERMINAL FORM: GULL WING
TERMINAL POSITION: SINGLE
TIME@PEAK REFLOW TEMPERATURE-MAX (S): 40
TRANSISTOR ELEMENT MATERIAL: SILICON
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