Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 21.4A (TC)
DETAILED DESCRIPTION: N-CHANNEL 60V 21.4A (TC) 5.7W (TA), 31.25W (TC) SURFACE MOUNT TO-252, (D-PAK)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON): 4.5V, 10V
FET TYPE: N-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 17NC @ 10V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 670PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SUD23N06-31-GE3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-252-3, DPAK (2 LEADS + TAB), SC-63
PACKAGING: REEL
POWER DISSIPATION (MAX): 5.7W (TA), 31.25W (TC)
RDS ON (MAX) @ ID, VGS: 31 MOHM @ 15A, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 2,000
SUPPLIER DEVICE PACKAGE: TO-252, (D-PAK)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS (MAX): ±20V
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
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