SUP85N10-10-E3

SUP85N10-10-E3

N-CHANNEL 100V 85A (TC) 3.75W (TA), 250W (TC) THROUGH HOLE TO-220AB

Call for availability

Manufactured by:

VISHAY

Mfr Part#:  SUP85N10-10-E3

PACKAGE / CASE:  TO-220-3

PACKAGING:  REEL

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  TO-220AB

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - CONTINUOUS DRAIN (ID) @ 25°C:  85A (TC)

DETAILED DESCRIPTION:  N-CHANNEL 100V 85A (TC) 3.75W (TA), 250W (TC) THROUGH HOLE TO-220AB

DRAIN TO SOURCE VOLTAGE (VDSS):  100V

DRIVE VOLTAGE (MAX RDS ON, MIN RDS ON):  4.5V, 10V

FET TYPE:  N-CHANNEL

GATE CHARGE (QG) (MAX) @ VGS:  160NC @ 10V

INPUT CAPACITANCE (CISS) (MAX) @ VDS:  6550PF @ 25V

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  VISHAY SILICONIX

MANUFACTURER PART NUMBER:  SUP85N10-10-E3

MANUFACTURER STANDARD LEAD TIME:  22 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  THROUGH HOLE

OPERATING TEMPERATURE:  -55°C ~ 175°C (TJ)

PACKAGE / CASE:  TO-220-3

PACKAGING:  REEL

POWER DISSIPATION (MAX):  3.75W (TA), 250W (TC)

RDS ON (MAX) @ ID, VGS:  10.5 MOHM @ 30A, 10V

SERIES:  TRENCHFET®

STANDARD PACKAGE:  500

SUPPLIER DEVICE PACKAGE:  TO-220AB

TECHNOLOGY:  MOSFET (METAL OXIDE)

VGS (MAX):  ±20V

VGS(TH) (MAX) @ ID:  3V @ 250ΜA

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