Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
AVALANCHE ENERGY RATING (EAS): 125 MJ
CONFIGURATION: SINGLE WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 75 V
DRAIN CURRENT-MAX (ID): 90 A
DRAIN-SOURCE ON RESISTANCE-MAX: 14 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 CODE: TO-220AB
JESD-30 CODE: R-PSFM-T3
JESD-609 CODE: E3
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: SUP90N08-8M2P-E3
MOISTURE SENSITIVITY LEVEL: 1
NUMBER OF ELEMENTS: 1
NUMBER OF TERMINALS: 3
OPERATING MODE: ENHANCEMENT MODE
OPERATING TEMPERATURE-MAX: 175 °C
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: FLANGE MOUNT, R-PSFM-T3
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: FLANGE MOUNT
PART PACKAGE CODE: TO-220AB
PBFREE CODE: YES
PEAK REFLOW TEMPERATURE (CEL): NOT SPECIFIED
PIN COUNT: 3
POLARITY/CHANNEL TYPE: N-CHANNEL
PULSED DRAIN CURRENT-MAX (IDM): 200 A
QUALIFICATION STATUS: NOT QUALIFIED
SURFACE MOUNT: NO
TERMINAL FINISH: MATTE TIN OVER NICKEL
TERMINAL FORM: THROUGH-HOLE
TERMINAL POSITION: SINGLE
TIME@PEAK REFLOW TEMPERATURE-MAX (S): NOT SPECIFIED
TRANSISTOR APPLICATION: SWITCHING
TRANSISTOR ELEMENT MATERIAL: SILICON
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