Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
ADDITIONAL FEATURE: LOW THRESHOLD
CONFIGURATION: SINGLE WITH BUILT-IN DIODE
DS BREAKDOWN VOLTAGE-MIN: 20 V
DRAIN CURRENT-MAX (ID): 730 MA
DRAIN-SOURCE ON RESISTANCE-MAX: 500 MO
FET TECHNOLOGY: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 CODE: TO-236
JESD-30 CODE: R-PDSO-G3
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: TN0200T-T1
NUMBER OF ELEMENTS: 1
NUMBER OF TERMINALS: 3
OPERATING MODE: ENHANCEMENT MODE
PACKAGE BODY MATERIAL: PLASTIC/EPOXY
PACKAGE DESCRIPTION: SMALL OUTLINE, R-PDSO-G3
PACKAGE SHAPE: RECTANGULAR
PACKAGE STYLE: SMALL OUTLINE
PART PACKAGE CODE: SOT-23
PIN COUNT: 3
POLARITY/CHANNEL TYPE: N-CHANNEL
QUALIFICATION STATUS: NOT QUALIFIED
SURFACE MOUNT: YES
TERMINAL FINISH: NOT SPECIFIED
TERMINAL FORM: GULL WING
TERMINAL POSITION: DUAL
TRANSISTOR APPLICATION: SWITCHING
TRANSISTOR ELEMENT MATERIAL: SILICON
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