CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
DRAIN TO SOURCE VOLTAGE (VDSS): 20V
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 2.2NC @ 4.5V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: TP0101K-T1-E3
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 350MW (TA)
RDS ON (MAX) @ ID, VGS: 650 MOHM @ 580MA, 4.5V
SERIES: TRENCHFET®
STANDARD PACKAGE: 1
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 1V @ 50ΜA
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