Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - CONTINUOUS DRAIN (ID) @ 25°C: 185MA (TA)
DRAIN TO SOURCE VOLTAGE (VDSS): 60V
EXPANDED DESCRIPTION: P-CHANNEL 60V 185MA (TA) 350MW (TA) SURFACE MOUNT SOT-23-3 (TO-236)
FET TYPE: P-CHANNEL
GATE CHARGE (QG) (MAX) @ VGS: 1.7NC @ 15V
INPUT CAPACITANCE (CISS) (MAX) @ VDS: 23PF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SILICONIX
MANUFACTURER PART NUMBER: TP0610K-T1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
OPERATING TEMPERATURE: -55°C ~ 150°C (TJ)
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER DISSIPATION (MAX): 350MW (TA)
RDS ON (MAX) @ ID, VGS: 6 OHM @ 500MA, 10V
SERIES: TRENCHFET®
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TECHNOLOGY: MOSFET (METAL OXIDE)
VGS(TH) (MAX) @ ID: 3V @ 250ΜA
ALTERNATE PARTS: TP0610K-T1-GE3
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