CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CONFIGURATION: HALF BRIDGE
CURRENT - COLLECTOR (IC) (MAX): 80A
CURRENT - COLLECTOR CUTOFF (MAX): 250ΜA
EXPANDED DESCRIPTION: IGBT MODULE NPT HALF BRIDGE 1200V 80A 463W CHASSIS MOUNT MTP
IGBT TYPE: NPT
INPUT: STANDARD
INPUT CAPACITANCE (CIES) @ VCE: 8.28NF @ 30V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SEMICONDUCTOR DIODES DIVISION
MANUFACTURER PART NUMBER: VS-40MT120UHAPBF
MANUFACTURER STANDARD LEAD TIME: 20 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS MOUNT
NTC THERMISTOR: NO
OPERATING TEMPERATURE: -40°C ~ 150°C (TJ)
PACKAGE / CASE: 12-MTP MODULE
POWER - MAX: 463W
STANDARD PACKAGE: 15
SUPPLIER DEVICE PACKAGE: MTP
VCE(ON) (MAX) @ VGE, IC: 4.91V @ 15V, 80A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 1200V
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