CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CONFIGURATION: HALF BRIDGE
CURRENT - COLLECTOR (IC) (MAX): 100A
CURRENT - COLLECTOR CUTOFF (MAX): 700ΜA
DETAILED DESCRIPTION: IGBT MODULE NPT HALF BRIDGE 600V 100A 347W CHASSIS MOUNT MTP
IGBT TYPE: NPT
INPUT: STANDARD
INPUT CAPACITANCE (CIES) @ VCE: 8NF @ 30V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SEMICONDUCTOR DIODES DIVISION
MANUFACTURER PART NUMBER: VS-70MT060WHTAPBF
MANUFACTURER STANDARD LEAD TIME: 17 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS MOUNT
NTC THERMISTOR: NO
OPERATING TEMPERATURE: -40°C ~ 150°C (TJ)
PACKAGE / CASE: 12-MTP MODULE
POWER - MAX: 347W
STANDARD PACKAGE: 105
SUPPLIER DEVICE PACKAGE: MTP
VCE(ON) (MAX) @ VGE, IC: 3.4V @ 15V, 140A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 600V
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