VS-GB100TP120N
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Mfr Part#: VS-GB100TP120N
PACKAGE / CASE: INT-A-PAK
STANDARD PACKAGE: 24
SUPPLIER DEVICE PACKAGE: INT-A-PAK
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CONFIGURATION: HALF BRIDGE
CURRENT - COLLECTOR (IC) (MAX): 200A
CURRENT - COLLECTOR CUTOFF (MAX): 5MA
FAMILY: TRANSISTORS - IGBTS - MODULES
INPUT: STANDARD
INPUT CAPACITANCE (CIES) @ VCE: 7.43NF @ 25V
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: VISHAY SEMICONDUCTOR DIODES DIVISION
MANUFACTURER PART NUMBER: VS-GB100TP120N
MANUFACTURER STANDARD LEAD TIME: 12 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: CHASSIS MOUNT
NTC THERMISTOR: NO
OPERATING TEMPERATURE: 150°C (TJ)
PACKAGE / CASE: INT-A-PAK
POWER - MAX: 650W
STANDARD PACKAGE: 24
SUPPLIER DEVICE PACKAGE: INT-A-PAK
VCE(ON) (MAX) @ VGE, IC: 2.2V @ 15V, 100A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 1200V
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