CASE CONNECTION:  SOURCE

CONFIGURATION:  COMMON SOURCE, 2 ELEMENTS

DS BREAKDOWN VOLTAGE-MIN:  125 V

DRAIN CURRENT-MAX (ABS) (ID):  40 A

DRAIN CURRENT-MAX (ID):  40 A

FET TECHNOLOGY:  METAL-OXIDE SEMICONDUCTOR

HIGHEST FREQUENCY BAND:  VERY HIGH FREQUENCY BAND

JESD-30 CODE:  R-CDFM-F4

MANUFACTURER:  ADVANCED SEMICONDUCTOR INC

MANUFACTURER PART NUMBER:  MRF151G

NUMBER OF ELEMENTS:  2

NUMBER OF TERMINALS:  4

OPERATING MODE:  ENHANCEMENT MODE

OPERATING TEMPERATURE-MAX:  200 °C

PACKAGE BODY MATERIAL:  CERAMIC, METAL-SEALED COFIRED

PACKAGE DESCRIPTION:  FLANGE MOUNT, R-CDFM-F4

PACKAGE SHAPE:  RECTANGULAR

PACKAGE STYLE:  FLANGE MOUNT

PIN COUNT:  4

POLARITY/CHANNEL TYPE:  N-CHANNEL

POWER DISSIPATION-MAX (ABS):  500 W

QUALIFICATION STATUS:  NOT QUALIFIED

SUBCATEGORY:  FET GENERAL PURPOSE POWER

SURFACE MOUNT:  YES

TERMINAL FINISH:  NOT SPECIFIED

TERMINAL FORM:  FLAT

TERMINAL POSITION:  DUAL

TRANSISTOR APPLICATION:  AMPLIFIER

TRANSISTOR ELEMENT MATERIAL:  SILICON