DDTC114YLP-7
PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 250MHZ 250MW SURFACE MOUNT 3-DFN1006 (1.0X0.6)Call for availability
Manufactured by:
Mfr Part#: DDTC114YLP-7
PACKAGE / CASE: 3-UFDFN
PACKAGING: REEL
SUPPLIER DEVICE PACKAGE: 3-DFN1006 (1.0X0.6)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: DDTC114
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 180 @ 50MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 250MHZ 250MW SURFACE MOUNT 3-DFN1006 (1.0X0.6)
FREQUENCY - TRANSITION: 250MHZ
MANUFACTURER: DIODES INCORPORATED
MANUFACTURER PART NUMBER: DDTC114YLP-7
MANUFACTURER STANDARD LEAD TIME: 20 WEEKS
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: 3-UFDFN
PACKAGING: REEL
POWER - MAX: 250MW
RESISTOR - BASE (R1): 10 KOHMS
RESISTOR - EMITTER BASE (R2): 47 KOHMS
SUPPLIER DEVICE PACKAGE: 3-DFN1006 (1.0X0.6)
TRANSISTOR TYPE: NPN - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 200MV @ 5MA, 50MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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DDTC114YLP-7
PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 250MHZ 250MW SURFACE MOUNT 3-DFN1006 (1.0X0.6)
MFR. Name: Diodes Incorporated
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