BCR135E6327HTSA1

BCR135E6327HTSA1

PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 150MHZ 200MW SURFACE MOUNT PG-SOT23-3

Call for availability

Manufactured by:

INFINEON TECHNOLOGIES

Mfr Part#:  BCR135E6327HTSA1

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  PG-SOT23-3

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

BASE PART NUMBER:  BCR135

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  100NA (ICBO)

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  70 @ 5MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 150MHZ 200MW SURFACE MOUNT PG-SOT23-3

FREQUENCY - TRANSITION:  150MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  INFINEON TECHNOLOGIES

MANUFACTURER PART NUMBER:  BCR135E6327HTSA1

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  TO-236-3, SC-59, SOT-23-3

PACKAGING:  REEL

POWER - MAX:  200MW

RESISTOR - BASE (R1):  10 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

STANDARD PACKAGE:  3,000

SUPPLIER DEVICE PACKAGE:  PG-SOT23-3

TRANSISTOR TYPE:  NPN - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  300MV @ 500ΜA, 10MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

ALTERNATE PARTS:  BCR135E6433HTMA1

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