BCR512E6327HTSA1
PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 500MA 100MHZ 330MW SURFACE MOUNT PG-SOT23-3Call for availability
Manufactured by:
Mfr Part#: BCR512E6327HTSA1
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: PG-SOT23-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: BCR512
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 500MA
CURRENT - COLLECTOR CUTOFF (MAX): 100NA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 60 @ 50MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 500MA 100MHZ 330MW SURFACE MOUNT PG-SOT23-3
FREQUENCY - TRANSITION: 100MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: INFINEON TECHNOLOGIES
MANUFACTURER PART NUMBER: BCR512E6327HTSA1
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 330MW
RESISTOR - BASE (R1): 4.7 KOHMS
RESISTOR - EMITTER BASE (R2): 4.7 KOHMS
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: PG-SOT23-3
TRANSISTOR TYPE: NPN - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 300MV @ 2.5MA, 50MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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