Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 500MA
CURRENT - COLLECTOR CUTOFF (MAX): 100NA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 40 @ 50MA, 5V
EXPANDED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) PNP - PRE-BIASED 50V 500MA 250MW SURFACE MOUNT TO-236AB (SOT23)
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NEXPERIA USA INC.
MANUFACTURER PART NUMBER: PDTB123ET,215
MANUFACTURER STANDARD LEAD TIME: 13 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 250MW
RESISTOR - BASE (R1) (OHMS): 2.2K
RESISTOR - EMITTER BASE (R2) (OHMS): 2.2K
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: TO-236AB (SOT23)
TRANSISTOR TYPE: PNP - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 300MV @ 2.5MA, 50MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
ALTERNATE PARTS: BCR553E6327HTSA1
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