PDTC114EM,315
PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 250MW SURFACE MOUNT DFN1006-3Call for availability
Manufactured by:
Mfr Part#: PDTC114EM,315
PACKAGE / CASE: SC-101, SOT-883
PACKAGING: REEL
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: DFN1006-3
PACKAGE / CASE: SC-101, SOT-883
PACKAGING: REEL
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: DFN1006-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 1ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 30 @ 5MA, 5V
EXPANDED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 250MW SURFACE MOUNT DFN1006-3
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NEXPERIA USA INC.
MANUFACTURER PART NUMBER: PDTC114EM,315
MANUFACTURER STANDARD LEAD TIME: 20 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SC-101, SOT-883
PACKAGING: REEL
POWER - MAX: 250MW
RESISTOR - BASE (R1) (OHMS): 10K
RESISTOR - EMITTER BASE (R2) (OHMS): 10K
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: DFN1006-3
TRANSISTOR TYPE: NPN - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 150MV @ 500ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 1ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 30 @ 5MA, 5V
FAMILY: TRANSISTORS (BJT) - SINGLE, PRE-BIASED
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NXP SEMICONDUCTORS
MANUFACTURER PART NUMBER: PDTC114EM,315
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SC-101, SOT-883
PACKAGING: REEL
POWER - MAX: 250MW
RESISTOR - BASE (R1) (OHMS): 10K
RESISTOR - EMITTER BASE (R2) (OHMS): 10K
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: DFN1006-3
TRANSISTOR TYPE: NPN - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 150MV @ 500ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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