PDTC143TU,115
PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 200MW SURFACE MOUNT SOT-323-3Call for availability
Mfr Part#: PDTC143TU,115
PACKAGE / CASE: SC-70, SOT-323
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-323-3
PACKAGE / CASE: SC-70, SOT-323
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-323
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: DTC143
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 1ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 200 @ 1MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 200MW SURFACE MOUNT SOT-323-3
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NEXPERIA USA INC.
MANUFACTURER PART NUMBER: PDTC143TU,115
MANUFACTURER STANDARD LEAD TIME: 27 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SC-70, SOT-323
PACKAGING: REEL
POWER - MAX: 200MW
RESISTOR - BASE (R1): 4.7 KOHMS
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-323-3
TRANSISTOR TYPE: NPN - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 100MV @ 250ΜA, 5MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
ALTERNATE PARTS: PDTC143TU,135 PDTC143TU,115 PDTC143TU,115 PDTC143TU,135 PDTC143TU,135 PDTC143TU,135 PDTC143TU,135
CATEGORY: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 1ΜA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 200 @ 1MA, 5V
FAMILY: TRANSISTORS (BJT) - SINGLE, PRE-BIASED
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: NXP SEMICONDUCTORS
MANUFACTURER PART NUMBER: PDTC143TU,115
MANUFACTURER STANDARD LEAD TIME: 6 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SC-70, SOT-323
PACKAGING: REEL
POWER - MAX: 200MW
RESISTOR - BASE (R1) (OHMS): 4.7K
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: SOT-323
TRANSISTOR TYPE: NPN - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 100MV @ 250ΜA, 5MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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