PEMD13,115

PEMD13,115

1 NPN, 1 PNP - Pre-Biased (Dual)

Call for availability

Manufactured by:

NEXPERIA

Mfr Part#:  PEMD13,115

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-666

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-666

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  1ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 10MA, 5V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) 1 NPN, 1 PNP - PRE-BIASED (DUAL) 50V 100MA 300MW SURFACE MOUNT SOT-666

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NEXPERIA USA INC.

MANUFACTURER PART NUMBER:  PEMD13,115

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  300MW

RESISTOR - BASE (R1):  4.7 KOHMS

RESISTOR - EMITTER BASE (R2):  47 KOHMS

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-666

TRANSISTOR TYPE:  1 NPN, 1 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  100MV @ 250ΜA, 5MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

CATEGORY:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  100MA

CURRENT - COLLECTOR CUTOFF (MAX):  1ΜA

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  100 @ 10MA, 5V

FAMILY:  TRANSISTORS (BJT) - ARRAYS, PRE-BIASED

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  NXP SEMICONDUCTORS

MANUFACTURER PART NUMBER:  PEMD13,115

MANUFACTURER STANDARD LEAD TIME:  6 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  SOT-563, SOT-666

PACKAGING:  REEL

POWER - MAX:  300MW

RESISTOR - BASE (R1) (OHMS):  4.7K

RESISTOR - EMITTER BASE (R2) (OHMS):  47K

STANDARD PACKAGE:  4,000

SUPPLIER DEVICE PACKAGE:  SOT-666

TRANSISTOR TYPE:  1 NPN, 1 PNP - PRE-BIASED (DUAL)

VCE SATURATION (MAX) @ IB, IC:  100MV @ 250ΜA, 5MA

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  50V

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