CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - GATE TO ANODE LEAKAGE (IGAO): 10NA
CURRENT - PEAK: 2ΜA
CURRENT - VALLEY (IV): 50ΜA
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: 2N6027RL1G
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)
POWER DISSIPATION (MAX): 300MW
STANDARD PACKAGE: 1
VOLTAGE: 40V
VOLTAGE - OFFSET (VT): 1.6V
VOLTAGE - OUTPUT: 11V
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