FJN3302RTA
PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 250MHZ 300MW THROUGH HOLE TO-92-3Call for availability
Manufactured by:
Mfr Part#: FJN3302RTA
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)
PACKAGING: TAPE BOX
STANDARD PACKAGE: 2,000
SUPPLIER DEVICE PACKAGE: TO-92-3
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: FJN3302
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 100NA (ICBO)
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 30 @ 5MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 250MHZ 300MW THROUGH HOLE TO-92-3
FREQUENCY - TRANSITION: 250MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: FJN3302RTA
MANUFACTURER STANDARD LEAD TIME: 14 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: THROUGH HOLE
PACKAGE / CASE: TO-226-3, TO-92-3 (TO-226AA) (FORMED LEADS)
PACKAGING: TAPE BOX
POWER - MAX: 300MW
RESISTOR - BASE (R1): 10 KOHMS
RESISTOR - EMITTER BASE (R2): 10 KOHMS
STANDARD PACKAGE: 2,000
SUPPLIER DEVICE PACKAGE: TO-92-3
TRANSISTOR TYPE: NPN - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 300MV @ 500ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
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