MMUN2211LT3G
PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 246MW SURFACE MOUNT SOT-23-3 (TO-236)Call for availability
Manufactured by:
Mfr Part#: MMUN2211LT3G
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
BASE PART NUMBER: MMUN22**L
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
CURRENT - COLLECTOR CUTOFF (MAX): 500NA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 35 @ 5MA, 10V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED 50V 100MA 246MW SURFACE MOUNT SOT-23-3 (TO-236)
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: MMUN2211LT3G
MANUFACTURER STANDARD LEAD TIME: 36 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: TO-236-3, SC-59, SOT-23-3
PACKAGING: REEL
POWER - MAX: 246MW
RESISTOR - BASE (R1): 10 KOHMS
RESISTOR - EMITTER BASE (R2): 10 KOHMS
STANDARD PACKAGE: 10,000
SUPPLIER DEVICE PACKAGE: SOT-23-3 (TO-236)
TRANSISTOR TYPE: NPN - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 250MV @ 300ΜA, 10MA
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 50V
ALTERNATE PARTS: MMUN2211LT1G
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