NSV9435T1G

NSV9435T1G

PRE-BIASED BIPOLAR TRANSISTOR (BJT) PNP - PRE-BIASED 30V 3A 110MHZ 720MW SURFACE MOUNT SOT-223 (TO-261)

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Manufactured by:

ON SEMICONDUCTOR

Mfr Part#:  NSV9435T1G

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  SOT-223 (TO-261)

Availability

  • Qty in Stock: Call for availability

  • Min. Order Qty: 1

SPECIFICATION

CATEGORIES:  DISCRETE SEMICONDUCTOR PRODUCTS

CURRENT - COLLECTOR (IC) (MAX):  3A

DC CURRENT GAIN (HFE) (MIN) @ IC, VCE:  125 @ 800MA, 1V

DETAILED DESCRIPTION:  PRE-BIASED BIPOLAR TRANSISTOR (BJT) PNP - PRE-BIASED 30V 3A 110MHZ 720MW SURFACE MOUNT SOT-223 (TO-261)

FREQUENCY - TRANSITION:  110MHZ

LEAD FREE STATUS / ROHS STATUS:  LEAD FREE / ROHS COMPLIANT

MANUFACTURER:  ON SEMICONDUCTOR

MANUFACTURER PART NUMBER:  NSV9435T1G

MANUFACTURER STANDARD LEAD TIME:  4 WEEKS

MOISTURE SENSITIVITY LEVEL (MSL):  1 (UNLIMITED)

MOUNTING TYPE:  SURFACE MOUNT

PACKAGE / CASE:  TO-261-4, TO-261AA

PACKAGING:  REEL

POWER - MAX:  720MW

RESISTOR - BASE (R1):  10 KOHMS

STANDARD PACKAGE:  1,000

SUPPLIER DEVICE PACKAGE:  SOT-223 (TO-261)

TRANSISTOR TYPE:  PNP - PRE-BIASED

VCE SATURATION (MAX) @ IB, IC:  550MV @ 300MA, 3A

VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX):  30V

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