Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 3A
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 125 @ 800MA, 1V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) PNP - PRE-BIASED 30V 3A 110MHZ 720MW SURFACE MOUNT SOT-223 (TO-261)
FREQUENCY - TRANSITION: 110MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ON SEMICONDUCTOR
MANUFACTURER PART NUMBER: NSV9435T1G
MANUFACTURER STANDARD LEAD TIME: 4 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: TO-261-4, TO-261AA
PACKAGING: REEL
POWER - MAX: 720MW
RESISTOR - BASE (R1): 10 KOHMS
STANDARD PACKAGE: 1,000
SUPPLIER DEVICE PACKAGE: SOT-223 (TO-261)
TRANSISTOR TYPE: PNP - PRE-BIASED
VCE SATURATION (MAX) @ IB, IC: 550MV @ 300MA, 3A
VOLTAGE - COLLECTOR EMITTER BREAKDOWN (MAX): 30V
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