DTC114EUBHZGTL
PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED + DIODE 100MA 250MHZ 200MW SURFACE MOUNT UMT3FCall for availability
Manufactured by:
Mfr Part#: DTC114EUBHZGTL
PACKAGE / CASE: SC-85
PACKAGING: REEL
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: UMT3F
Availability
Qty in Stock: Call for availability
Min. Order Qty: 1
CATEGORIES: DISCRETE SEMICONDUCTOR PRODUCTS
CURRENT - COLLECTOR (IC) (MAX): 100MA
DC CURRENT GAIN (HFE) (MIN) @ IC, VCE: 30 @ 10MA, 5V
DETAILED DESCRIPTION: PRE-BIASED BIPOLAR TRANSISTOR (BJT) NPN - PRE-BIASED + DIODE 100MA 250MHZ 200MW SURFACE MOUNT UMT3F
ENVIRONMENTAL INFORMATION: TRANSISTOR, MOSFET LEVEL 1 MSLTRANSISTOR WHISKER INFODTC114EUBHZG ESD DATA
FREQUENCY - TRANSITION: 250MHZ
LEAD FREE STATUS / ROHS STATUS: LEAD FREE / ROHS COMPLIANT
MANUFACTURER: ROHM SEMICONDUCTOR
MANUFACTURER PART NUMBER: DTC114EUBHZGTL
MANUFACTURER STANDARD LEAD TIME: 7 WEEKS
MOISTURE SENSITIVITY LEVEL (MSL): 1 (UNLIMITED)
MOUNTING TYPE: SURFACE MOUNT
PACKAGE / CASE: SC-85
PACKAGING: REEL
POWER - MAX: 200MW
RESISTOR - BASE (R1): 10 KOHMS
RESISTOR - EMITTER BASE (R2): 10 KOHMS
SERIES: AUTOMOTIVE, AEC-Q101
STANDARD PACKAGE: 3,000
SUPPLIER DEVICE PACKAGE: UMT3F
TRANSISTOR TYPE: NPN - PRE-BIASED + DIODE
VCE SATURATION (MAX) @ IB, IC: 300MV @ 500ΜA, 10MA
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